BOSE CONDENSATION AND THE ATHERMAL NATURE OF PULSED LASER ANNEALING

被引：7

作者：

VANVECHTEN, JA

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983502

中图分类号：

学科分类号：

摘要：

引用

页码：11 / 21

页数：11

共 62 条

[1] MELTING KINETICS OF QUARTZ AND CRISTOBALITE [J].

AINSLIE, NG ;

MACKENZIE, JD ;

TURNBULL, D .

JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (10) :1718-&

[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[4] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[5] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[6] HOT-ELECTRON EMISSION FROM SILICON UNDER PULSED LASER EXCITATION [J].

BENSOUSSAN, M ;

MOISON, JM .

JOURNAL DE PHYSIQUE, 1981, 42 (NC7) :149-153

[7] EFFECT OF ELECTRON-HOLE PAIRS ON THE MELTING OF SILICON [J].

BOK, J .

PHYSICS LETTERS A, 1981, 84 (08) :448-450

[8] ENHANCED DIFFUSION MECHANISMS [J].

BOURGOIN, JC ;

CORBETT, JW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :157-188

[9] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[10]

CAR R, 1983, PHYSICA B, V118, P1007

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