INDENTATION DISLOCATION ROSETTES IN SILICON

被引：52

作者：

HU, SM ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1063/1.321797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1470 / 1472

页数：3

共 9 条

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[2] Govorkov V. G., 1972, Soviet Physics - Crystallography, V17, P518
[3] HU SM, 1975, J APPL PHYS, V46, P1465, DOI 10.1063/1.321796
[4] DISLOCATIONS IN INDENTED MAGNESIUM OXIDE CRYSTALS
KEH, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1538 - 1545
[5] MILVIDSKII MG, 1968, SOV PHYS CRYSTALLOGR, V12, P896
[6] NADGORNYI EM, 1963, SOV PHYS-SOL STATE, V5, P732
[7] SHASKOLSKAYA MP, 1962, SOV PHYS-CRYSTALLOGR, V7, P83
[8] SOKOLNIKOFF IS, 1956, MATHEMATICAL THEORY, P343
[9] STEPANOVA VM, 1965, SOV PHYS CRYSTALLOGR, V10, P163