A STUDY OF BEHAVIOR OF LATTICE-DEFECTS BY MEANS OF HVEM INSITU EXPERIMENTS AND REAL-TIME X-RAY TOPOGRAPHY

被引：5

作者：

IMURA, T ^{[1
]}

机构：

[1] AICHI INST TECHNOL,TOYOTA 47003,JAPAN

来源：

MATERIALS TRANSACTIONS JIM | 1991年 / 32卷 / 09期

关键词：

BEHAVIOR OF LATTICE DEFECTS; HIGH VOLTAGE ELECTRON MICROSCOPY; INSITU EXPERIMENT; X-RAY TOPOGRAPHY; DISLOCATION; DIRECT OBSERVATION OF CRYSTAL GROWTH; DEFORMATION AND STRENGTH OF CRYSTALLINE MATERIALS;

D O I：

10.2320/matertrans1989.32.793

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：793 / 806

页数：14

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[3]

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[5]

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[10] POSSIBILITIES FOR INSITU OBSERVATION OF BASIC DEFORMATION PROCESSES AND OF OTHER DYNAMIC PROCESSES [J].

IMURA, T .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (10) :1197-1208

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