DEPENDENCE OF HOOGE PARAMETER OF COMPOUND SEMICONDUCTORS ON TEMPERATURE

Voltage noise spectrum densities of quarter-micron filaments made by GaAs, InP and heterostructures are measured in detail as a function of decreasing temperature to 10 K, and the Hooge noise parameter alpha(H) of each device is precisely determined at each temperature. Focused ion beam (FIB) implanted n-GaAs has the smallest alpha(H) of 1.0 x 10(-8) at 60 K, decreasing from 2 x 10(-6) at room temperature. The derived value of alpha(H) is the smallest one ever reported for compound semiconductor devices, and compares favorably with that expected from quantum 1/f noise theory. FIB-implanted n-InP has the smallest alpha(H) of about 1 x 10(-7) at 50 K. The alpha(H) of a molecular beam epitaxially (MBE) grown In0.8Ga0.2As heterostructure depends on mu(po) between 1 to 10 m2/V.s, realizing 1/f noise in the cross section of optical phonon scattering.