STEP-RELATED GROWTH PHENOMENA ON EXACT AND MISORIENTED (001) SURFACES OF CVD-GROWN SINGLE-CRYSTAL DIAMONDS

被引：43

作者：

VANENCKEVORT, WJP

JANSSEN, G

SCHERMER, JJ

GILING, LJ

机构：

[1] Research Institute of Materials (RIM), University of Nijmegen, 6525 ED Nijmegen

来源：

DIAMOND AND RELATED MATERIALS | 1995年 / 4卷 / 04期

关键词：

CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; STEP-CONTROLLED EPITAXY; SURFACE CHARACTERIZATION;

D O I：

10.1016/0925-9635(94)05201-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study gives an overview of growth phenomena observed on {001} homoepitaxial diamond films grown by hot-filament-assisted CVD and acetylene-oxygen flame deposition. The main emphasis lies on the nucleation and propagation of steps, which form a key to understanding the growth on the (2 x 1) reconstructed {001} faces.

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页码：250 / 255

页数：6

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