THE BLACK SILICON METHOD .2. THE EFFECT OF MASK MATERIAL AND LOADING ON THE REACTIVE ION ETCHING OF DEEP SILICON TRENCHES

被引：116

作者：

JANSEN, H

DEBOER, M

BURGER, J

LEGTENBERG, R

ELWENSPOEK, M

机构：

[1] MESA Research Institute, University of Twente, 7500 AE Enschede

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00149-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher (RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.

引用

页码：475 / 480

页数：6

共 10 条

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