ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDE

被引：18

作者：

RAMESH, K

CHANDORKAR, AN

VASI, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3958 / 3962

页数：5

共 23 条

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