LOW-TEMPERATURE DEPOSITION OF HEXAGONAL FERRITE FILMS BY SPUTTERING

被引：31

作者：

MORISAKO, A ^{[1
]}

NAKANISHI, H ^{[1
]}

MATSUMOTO, M ^{[1
]}

NAOE, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.355528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb-substituted Ba-ferrite films were prepared at various substrate temperature T(s) by dc magnetron sputtering and their crystallographic characteristics and magnetic properties were investigated. The substitution of Pb facilitates the crystallization and improves the crystallinity for hexagonal M phase. All of the films prepared at T(s) above 460-degrees-C exhibit a good c-axis orientation and the c-axis dispersion angle (DELTAtheta50) for Pb-substituted Ba-ferrite films is as small as 1-degrees. The coercivities (H(c perpendicular-to)) and H(c parallel-to)) and saturation magnetization M(s) of Pb-substituted Ba-ferrite films are 0.7-1.0 kOe, 0.2 kOe and 250-300 emu/cm3, respectively.

引用

页码：5969 / 5971

页数：3

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