PICOSECOND REFLECTIVITY MEASUREMENTS ON GLOW-DISCHARGE A-SI-H

被引：13

作者：

BERGNER, H ^{[1
]}

BRUCKNER, V ^{[1
]}

DIETRICH, D ^{[1
]}

KERSTAN, F ^{[1
]}

NOWICK, W ^{[1
]}

机构：

[1] TH KARL MARX STADT,SEKT PHYS ELEKTR BAUELEMENTE,DDR-9001 KARL MARX STADT,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 117卷 / 01期

关键词：

D O I：

10.1002/pssb.2221170120

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：197 / 202

页数：6

共 11 条

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[2] SPATIALLY INHOMOGENEOUS CARRIER CONCENTRATION-DEPENDENCE OF THE REFLECTIVITY OF SEMICONDUCTORS
BERGNER, H
BRUCKNER, V
SCHRODER, B
[J]. OPTICAL AND QUANTUM ELECTRONICS, 1982, 14 (03) : 245 - 251
[3] BERGNER H, 1983, THESIS U JENA
[4] BERGNER H, KVANTOVAYA ELEKTRONI
[5] BRODSKY MH, 1977, PHYS REV B, V16, P35
[6] DIETRICH D, 1982, THESIS TH K MARX STA
[7] JOHNSON AM, 1980, 2 C PIC PHEN
[8] KREHER K, 1973, FESTKORPERPHYSIK
[9] FAST RADIATIONLESS RECOMBINATION IN AMORPHOUS SILICON
REHM, W
FISCHER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (02): : 595 - 602
[10] Ruhle K., 1980, Feingeraetetechnik, V29, P166