TEMPERATURE-INDEPENDENT PHOTO-LUMINESCENCE IN AMORPHOUS SI1-XCX-(F,H) FILMS WITH LOW DEFECT DENSITY

被引:25
作者
MORIMOTO, A
MIURA, T
KUMEDA, M
SHIMIZU, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 06期
关键词
D O I
10.1143/JJAP.22.908
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:908 / 911
页数:4
相关论文
共 21 条
[1]   THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H ALLOYS [J].
COLLINS, RW ;
PAESLER, MA ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1980, 34 (10) :833-836
[2]   BONDING OF FLUORINE IN AMORPHOUS HYDROGENATED SILICON [J].
FANG, CJ ;
LEY, L ;
SHANKS, HR ;
GRUNTZ, KJ ;
CARDONA, M .
PHYSICAL REVIEW B, 1980, 22 (12) :6140-6148
[3]   CHARGED DEFECT-PAIR LUMINESCENCE IN A-AS2S3 [J].
HIGASHI, GS ;
KASTNER, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21) :L821-L826
[4]   A SIMPLE MOLECULAR-ORBITAL CALCULATION OF ELECTRON-SPIN-RESONANCE G-VALUES FOR AMORPHOUS SI1-XCX, SI1-XGEX AND GE1-XCX [J].
ISHII, N ;
KUMEDA, M ;
SHIMIZU, T .
SOLID STATE COMMUNICATIONS, 1982, 41 (02) :143-146
[5]  
LUCOVSKY G, 1981, FUNDAMENTAL PHYSICS, P87
[6]   GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS [J].
MORIMOTO, A ;
MIURA, T ;
KUMEDA, M ;
SHIMIZU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L119-L121
[7]   DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING [J].
MORIMOTO, A ;
MIURA, T ;
KUMEDA, M ;
SHIMIZU, T .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7299-7305
[8]   ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION [J].
MORIMOTO, A ;
MIURA, T ;
KUMEDA, M ;
SHIMIZU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L833-L836
[9]   NMR AND IR STUDIES ON HYDROGENATED AMORPHOUS SI1-XCX FILMS [J].
NAKAZAWA, K ;
UEDA, S ;
KUMEDA, M ;
MORIMOTO, A ;
SHIMIZU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03) :L176-L178
[10]  
PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P61