DEEP-LEVEL ANALYSIS IN (ALGA)AS-GAAS 2-D ELECTRON-GAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS

被引：67

作者：

LORECK, L

DAMBKES, H

HEIME, K

PLOOG, K

WEIMANN, G

机构：

[1] DEUTSCH BUNDESPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 01期

关键词：

D O I：

10.1109/EDL.1984.25812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：9 / 11

页数：3

共 10 条

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ZIJLSTRA, RJJ .

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[2] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

DELAGEBEAUDEUF, D ;

LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[4] 1/F NOISE IN MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

DUH, KH ;

VANDERZIEL, A ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (01) :12-13

[5]

HIKOSAKA K, 1982, I PHYS C SER, V63, P233

[6]

JOSHIN K, 1983, IEEE MTT S, P563

[7]

KUNZEL H, UNPUB INFLUENCE ALLO

[8]

LINH NT, 1983, 8TH EUR SPEC WORKSH

[9]

LORECK L, 1983, 7TH INT C NOIS PHYS

[10]

van der Ziel A., 1976, NOISE MEASUREMENTS

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