EFFECT OF HYDROGEN ON THE IMPEDANCE OF PASSIVATING OXIDE-FILMS FORMED ON ALUMINUM IN SODIUM-NITRATE SOLUTION

被引：20

作者：

LEE, SM

SU, IP

机构：

[1] Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Cheongyangni

来源：

JOURNAL OF APPLIED ELECTROCHEMISTRY | 1992年 / 22卷 / 02期

关键词：

D O I：

10.1007/BF01023816

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A.c. impedance has been determined at room temperature on hydrogen-free and hydrogen-charged passivating oxide films on aluminium in 0.05 M Na2SO4 solution. Analysis of the impedance data enabled a clear distinction between the capacitance and inductance of the hydrogen-free oxide film and those of the hydrogen-charged oxide film to be made. The changes in capacitance and inductance by hydrogen-charging into the oxide films are discussed in relation to the compositional change from gamma-Al2O3 to hydrated alumina.

引用

页码：151 / 155

页数：5

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