OPTICAL STUDIES OF FREE AND BOUND EXCITONIC STATES IN GASB

被引:59
作者
RUHLE, W [1 ]
JAKOWETZ, W [1 ]
WOLK, C [1 ]
LINNEBACH, R [1 ]
PILKUHN, M [1 ]
机构
[1] UNIV STUTTGART,PHYS INST,PFAFFENWALDRING 57,7 STUTTGART,FED REP GER
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1976年 / 73卷 / 01期
关键词
D O I
10.1002/pssb.2220730124
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:255 / 264
页数:10
相关论文
共 18 条
[1]   ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+
[2]  
BENOITAL.C, 1972, PHYS REV B, V5, P4900, DOI 10.1103/PhysRevB.5.4900
[3]   THERMAL DISSOCIATION OF EXCITONS BOUNDS TO NEUTRAL ACCEPTORS IN HIGH-PURITY GAAS [J].
BIMBERG, D ;
SONDERGELD, M ;
GROBE, E .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3451-+
[4]  
BIMBERG D, 1974, J PHYSIQUE S, V35
[5]  
DEAN PJ, 1968, P INT C PHYS SEMICON, P1090
[6]   DEPENDENCE OF EXCITON REFLECTANCE ON FIELD AND OTHER SURFACE CHARACTERISTICS - CASE OF INP [J].
EVANGELI.F ;
FISCHBAC.JU ;
FROVA, A .
PHYSICAL REVIEW B, 1974, 9 (04) :1516-1524
[7]   PHOTOCONDUCTIVITY ASSOCIATED WITH LANDAU STRUCTURE IN GASB [J].
FILION, A ;
FORTIN, E .
PHYSICAL REVIEW B, 1973, 8 (08) :3852-3860
[8]  
GERSHENZON EI, 1971, JETP LETT-USSR, V14, P185
[9]  
HASS M, 1967, SEMICONDUCT SEMIMET, V3, P14
[10]   LUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED P-GASB [J].
JAKOWETZ, W ;
RUHLE, W ;
BREUNINGER, K ;
PILKUHN, M .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01) :169-+