MAGNETOTUNNELING FROM ACCUMULATION LAYERS IN ALXGA1-XAS CAPACITORS

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3893 - 3899

[2] PARAMETRIC APPROACH TO SURFACE SCREENING OF A WEAK EXTERNAL ELECTRIC FIELD [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1246 - +

[3] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 475 - +

[4] BALLISTIC ELECTRONS IN AN INHOMOGENEOUS SUB-MICRON STRUCTURE - THERMAL AND CONTACT EFFECTS [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7349 - 7351

[5] CONDUCTANCE ANOMALIES DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J]. PHYSICAL REVIEW, 1967, 160 (03): : 679 - +

[6] Berezovets V. A., 1983, Soviet Physics - Solid State, V25, P1725

[7] BERK WA, 1985, B AM PHYS SOC, V30, P383

[8] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[9] EFFECT OF LANDAU LEVELS UPON TUNNEL CURRENTS IN INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (12) : 548 - 550

[10] OSCILLATORY STRUCTURES IN GAAS/(ALGA)AS TUNNEL-JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (02) : 262 - 262

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3893 - 3899

[2] PARAMETRIC APPROACH TO SURFACE SCREENING OF A WEAK EXTERNAL ELECTRIC FIELD [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1246 - +

[3] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 475 - +

[4] BALLISTIC ELECTRONS IN AN INHOMOGENEOUS SUB-MICRON STRUCTURE - THERMAL AND CONTACT EFFECTS [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7349 - 7351

[5] CONDUCTANCE ANOMALIES DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J]. PHYSICAL REVIEW, 1967, 160 (03): : 679 - +

[6] Berezovets V. A., 1983, Soviet Physics - Solid State, V25, P1725

[7] BERK WA, 1985, B AM PHYS SOC, V30, P383

[8] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[9] EFFECT OF LANDAU LEVELS UPON TUNNEL CURRENTS IN INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (12) : 548 - 550

[10] OSCILLATORY STRUCTURES IN GAAS/(ALGA)AS TUNNEL-JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (02) : 262 - 262