CRYOGENICALLY COOLED K-BAND HIGH ELECTRON-MOBILITY TRANSISTOR RECEIVER FOR RADIO ASTRONOMICAL OBSERVATION

被引:11
作者
KASUGA, T [1 ]
KAWABE, R [1 ]
ISHIGURO, M [1 ]
YAMADA, K [1 ]
KURIHARA, H [1 ]
NIORI, M [1 ]
HIRACHI, Y [1 ]
机构
[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
关键词
D O I
10.1063/1.1139292
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:379 / 382
页数:4
相关论文
共 15 条
[1]   HEMT 60 GHZ AMPLIFIER [J].
BERENZ, J ;
NAKANO, K ;
HSU, TI ;
GOEL, J .
ELECTRONICS LETTERS, 1985, 21 (22) :1028-1029
[2]  
EDRICH J, 1976, METHOD EXPT PHYSICS, V12, P225
[3]   IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
SAITO, J ;
NANBU, K ;
ISHIKAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611
[4]   INTERSTELLAR AMMONIA [J].
HO, PTP ;
TOWNES, CH .
ANNUAL REVIEW OF ASTRONOMY AND ASTROPHYSICS, 1983, 21 :239-270
[5]  
IWAKUNI M, 1985, IEEE MICROWAVE THEOR, P551
[6]  
KAIFU N, 1977, PUBL ASTRON SOC JPN, V29, P429
[7]  
KAIFU N, 1984, P INT S MILLIMETER S, P5
[8]   DESIGN AND PERFORMANCE OF A 45-GHZ HEMT MIXER [J].
MAAS, SA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (07) :799-803
[9]   A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].
MIMURA, T ;
HIYAMIZU, S ;
FUJII, T ;
NANBU, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227
[10]  
MOCHIZUKI T, 1985, IEEE INT MTT S MICRO, P543