GATE-TRIGGERED TURN-ON PROCESS IN THYRISTORS

被引:42
作者
BERGMAN, GD
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D O I
10.1016/0038-1101(65)90063-8
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:757 / &
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共 6 条
[1]   MULTITERMINAL P-N-P-N SWITCHES [J].
ALDRICH, RW ;
HOLONYAK, N .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1236-1239
[2]  
LONGINI RL, 1963, IEEE DEVICE, VED10, P178
[3]  
MAPHAM N, 1962, ELECTRONICS, V35, P50
[4]  
MISAWA T, 1959, J ELECTRON CONTR, V7, P523
[5]   THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J].
MOLL, JL ;
ROSS, IM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01) :72-78
[6]  
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