PSEUDOMORPHIC GROWTH OF SIXGE1-X ON GAAS(110)

被引:8
作者
EBERL, K
KROTZ, G
WOLF, T
SCHAFFLER, F
ABSTREITER, G
机构
关键词
MOLECULAR BEAM EPITAXY - SEMICONDUCTING GALLIUM ARSENIDE - SPECTROSCOPY; AUGER ELECTRON;
D O I
10.1088/0268-1242/2/9/001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Si//xGe//1// minus //x films were grown on cleaved GaAs(110) surfaces by molecular beam epitaxy at growth temperatures between 20 and 500 degree C. The lattice mismatch between substrate and overlayer can be varied continuously between 0 and 4% v changing the Si//xGe//1// minus //x composition from x equals 0 (pure Ge) to x equals 1 (pure Si). The lateral lattice constant of the overlayer was determined as a function of coverage by quantitative analysis of the respective LEED pattern. This gives the critical thickness h//c up to which the overlayer is elastically accommodated to the substrate. The segregation of Ga and As on top of the Si//xGe//1// minus //x layers is studied as a function of growth temperature and composition with Auger electron spectroscopy.
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页码:561 / 567
页数:7
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