HIGH-POWER ALGAAS LASER WITH A THIN TAPERED-THICKNESS ACTIVE LAYER

被引：7

作者：

MURAKAMI, T

OHTAKI, K

MATSUBARA, H

YAMAWAKI, T

SAITO, H

ISSHIKI, K

KOKUBO, Y

KUMABE, H

SUSAKI, W

机构：

[1] Mitsubishi Electric Corp, LSI, Research & Development Lab,, Itami, Jpn, Mitsubishi Electric Corp, LSI Research & Development Lab, Itami, Jpn

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 04期

关键词：

D O I：

10.1049/el:19860151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：217 / 218

页数：2

共 4 条

[1] INFLUENCES OF THIN ACTIVE LAYER IN (GAAL)AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LIQUID-PHASE EPITAXY [J].

HAYAKAWA, T ;

MIYAUCHI, N ;

SUYAMA, T ;

YAMAMOTO, S ;

HAYASHI, H ;

YANO, S ;

HIJIKATA, T .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) :3088-3095

[2]

KAJIMURA T, 1983, JPN J APPL PHYS S, V22, P325

[3]

VILMS, 1983, JPN J APPL PHYS, V22, pL455

[4] A HIGH-POWER, SINGLE-MODE LASER WITH TWIN-RIDGE-SUBSTRATE STRUCTURE [J].

WADA, M ;

HAMADA, K ;

SHIMIZU, H ;

SUGINO, T ;

TAJIRI, F ;

ITOH, K ;

KANO, G ;

TERAMOTO, I .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :853-854

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