CRITICAL-CURRENT VARIATION WITH PR CONTENT IN Y1-XPRXBA2CU3O7 EPITAXIAL-FILMS

被引：8

作者：

HEGDE, MS ^{[1
]}

THOMAS, B ^{[1
]}

VASANTHACHARYA, NY ^{[1
]}

BHAT, SV ^{[1
]}

SRINIVASU, VV ^{[1
]}

KUMAR, N ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.48.6465

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

c-axis-oriented epitaxial Y1-xPrxBa2Cu3O7 (x = 0, 0.05, 0.1, 0.2, 0.3, and 0.35) thin films have been grown with the pulsed-laser-deposition method. Superconducting transition temperatures of the films are within +/-2 K of the corresponding polycrystalline bulk samples. The critical current density J(c) of Pr-doped films for x = 0.1-0.3 is about two orders of magnitude lower than of the pure 1:2:3 films. This exponential fall in J(c) with doping (x) can be understood semiquantitatively in terms of depairing due to a random-impurity (Pr-ion) potential causing localized suppression of the superconducting order parameter around the impurity to about the in-plane coherence length.

引用

页码：6465 / 6469

页数：5

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