HIGH-PRESSURE STUDIES OF GE USING SYNCHROTRON RADIATION

被引：91

作者：

QADRI, SB ^{[1
]}

SKELTON, EF ^{[1
]}

WEBB, AW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3609 / 3611

页数：3

共 17 条

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[2]

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[9]

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[10] CRYSTAL STRUCTURES OF NEW FORMS OF SILICON + GERMANIUM [J].

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