MODULATION OF OPTICAL ABSORPTION AT INTRINSIC EDGE BY ACOUSTOELECTRIC DOMAINS IN N-GAAS

被引：34

作者：

SPEARS, DL

BRAY, R

机构：

来源：

关键词：

D O I：

10.1063/1.1651917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：118 / &

共 19 条

[1]

BIR GL, 1962, SOV PHYS-SOL STATE, V3, P2221

[2]

BIR GL, 1961, FIZ TVERD TELA, V3, P3050

[3]

BRAY R, 1966, J PHYS SOC JPN, VS 21, P483

[4] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1951, 82 (06) :900-905

[5]

HAMAKAWA Y, 1966, J PHYS SOC JPN, VS 21, P111

[6] THEORY OF URBACH RULE [J].

KEIL, TH .

PHYSICAL REVIEW, 1966, 144 (02) :582-&

[7]

KUMAR CS, 1966, B AM PHYS SOC, V11, P173

LAMBERT, LM .

[9] PNONON-BROADENED OPTICAL SPECTRA - URBACHS RULE [J].

MAHAN, GD .

PHYSICAL REVIEW, 1966, 145 (02) :602-&

[10] ABSORPTION EDGE OF GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].

PAIGE, EGS ;

REES, HD .