SCANNING-TUNNELING-MICROSCOPY OF THE GAAS (311)A SURFACE RECONSTRUCTION

被引：30

作者：

WASSERMEIER, M ^{[1
]}

SUDIJONO, J ^{[1
]}

JOHNSON, MD ^{[1
]}

LEUNG, KT ^{[1
]}

ORR, BG ^{[1
]}

DAWERITZ, L ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] UNIV MICHIGAN,HARRISON M RANDALL LAB,ANN ARBOR,MI 48109

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00855-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) are used to study the reconstruction of the GaAs (311)A surface. During and after molecular-beam epitaxy, in-situ RHEED of the surface shows a lateral periodicity of 3.2 nm perpendicular to the [2 $($) over bar$$ 33] direction. This periodicity is confirmed employing in-situ STM. The height of this periodic surface structure is two monolayers, i.e., 0.34 nm. We show how this reconstruction, characterized by a dimerization of the surface As atoms, can be formed using a simple electron counting model. The excellent agreement with the experimental results further support this model, that was already found to explain the reconstructions of the (100) and (111) surfaces.

引用

页码：425 / 430

页数：6