REACTIVE SPUTTERING OF TITANIUM BORIDE

被引：19

作者：

LARSSON, T ^{[1
]}

BLOM, HO ^{[1
]}

BERG, S ^{[1
]}

OSTLING, M ^{[1
]}

机构：

[1] ROYAL INST TECHNOL ELECTRUM,S-16428 KISTA,SWEDEN

来源：

THIN SOLID FILMS | 1989年 / 172卷 / 01期

关键词：

D O I：

10.1016/0040-6090(89)90124-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：133 / 140

页数：8

共 8 条

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[2] STOICHIOMETRY DETERMINATION OF REACTIVELY SPUTTERED TITANIUM-SILICIDE [J].

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OSTLING, M ;

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[4] HYSTERESIS EFFECT IN REACTIVE SPUTTERING - A PROBLEM OF SYSTEM STABILITY [J].

KADLEC, S ;

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[5] DIFFUSION BARRIERS IN THIN-FILMS [J].

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[6]

PADMANABHAN KR, 1981, THIN SOLID FILMS, V107, P13

[7]

SHAPPIRIO JR, 1985, SOLID STATE TECHNOL, V28, P161

[8] SYNTHESIS AND PROPERTIES OF SOME REFRACTORY TRANSITION-METAL DIBORIDE THIN-FILMS [J].

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