THEORY OF THE THERMAL-EXPANSION OF SI AND DIAMOND

被引：140

作者：

XU, CH

WANG, CZ

CHAN, CT

HO, KM

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,MICROELECTR RES CTR,AMES,IA 50011

[2] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS,AMES,IA 50011

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.43.5024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phonon-dispersion curves, lattice mode Gruneisen parameters, and the coefficients of thermal expansion are calculated for Si and C within a tight-binding model. The results are in good agreement with experimental data. The origin of the negative thermal expansion in Si is examined, and we find that the different thermal-expansion behaviors between Si and C can be explained by the different relative strengths of bond-bending and bond-stretching forces.

引用

页码：5024 / 5027

页数：4

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