INTERNAL-FRICTION IN INTRINSIC AND N-TYPE GERMANIUM AND SILICON

被引：8

作者：

GERK, AP ^{[1
]}

WILLIAMS, WS ^{[1
]}

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

关键词：

D O I：

10.1063/1.331139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3585 / 3606

页数：22

共 94 条

[1] AENTS E, 1962, J APPL PHYS, V33, P3078
[2] DISLOCATION DISTRIBUTION IN DEFORMED GERMANIUM
ALEXANDE.H
HAASEN, P
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (2P3) : 1209 - &
[3] ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28
[4] THE STACKING-FAULT ENERGY IN GERMANIUM
ART, A
AERTS, E
DELAVIGNETTE, P
AMELINCKX, S
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (02) : 40 - 41
[5] BARDSLEY W, 1960, PROGRESS SEMICONDUCT, V4, P157
[6] BARTH W, 1970, PHYS STATUS SOLIDI, V38, pK141
[7] POLARIZATION OF INFRARED ABSORPTION OF DISOLOCATIONS IN GERMANIUM
BARTH, W
ELSASSER, K
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 48 (02): : K147 - &
[8] Radiative Recombination in Germanium with High Dislocation Densities
Barth, W.
Bettini, M.
Ostertag, U.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03): : K177 - K180
[9] ONE-DIMENSIONAL OVERLAP FUNCTIONS AND THEIR APPLICATION TO AUGER RECOMBINATION IN SEMICONDUCTORS
BEATTIE, AR
LANDSBERG, PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295): : 486 - 495
[10] AUGER EFFECT IN SEMICONDUCTORS
BEATTIE, AR
LANDSBERG, PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29