STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING

被引：20

作者：

ALEKSANDROV, LN ^{[1
]}

LOVYAGIN, RN ^{[1
]}

机构：

[1] ACAD SCI USSR, SEMICONDUCTOR PHYS INST, NOVOSIBIRSK, USSR

来源：

关键词：

D O I：

10.1016/0040-6090(74)90027-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 10

页数：10

共 14 条

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[3] ALEKSANDROV LN, 1970, CRISTALLOGR, V15, P203
[4] BARTON WK, 1951, PHILOS T R SOC LON A, V243, P299
[5] BEZERIANOS N, 1972, J APPL PHYS, V43, P4
[6] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES
CULLIS, AG
BOOKER, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &
[7] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS
JOYCE, BA
NEAVE, JH
WATTS, BE
[J]. SURFACE SCIENCE, 1969, 15 (01) : 1 - &
[8] Kossel W., 1927, NACHR GES WISS GOTT, P135
[9] NICKERSON T, 1965, SEMICONDUCTOR PRODUC, V8, P30
[10] PCHELYAKOV OP, 1973, PHYS STATUS SOLIDI A, V17, P2