POINT-DEFECT TRAPPING IN SOLID-PHASE EPITAXIALLY GROWN SILICON-ANTIMONY ALLOYS

被引：26

作者：

PENNYCOOK, SJ

NARAYAN, J

HOLLAND, OW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：837 / 840

页数：4

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