ASSESSMENT OF THE SURFACE QUALITY OF SIMOX WAFERS BY UV REFLECTANCE

被引：45

作者：

HARBEKE, G ^{[1
]}

JASTRZEBSKI, L ^{[1
]}

机构：

[1] SRI INT,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 02期

关键词：

D O I：

10.1149/1.2086534

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The surface quality of SIMOX wafers implanted under various conditions of implant temperature, voltage, and dose has been characterized in terms of surface contamination, roughness, and amorphization by UV reflectance spectroscopy. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：696 / 699

页数：4

共 8 条

[1] MEASUREMENT OF CORRELATION BETWEEN SPECULAR REFLECTANCE AND SURFACE-ROUGHNESS OF AG FILMS [J].