THE ROLE OF GRAIN-BOUNDARIES IN CONDUCTION AND BREAKDOWN OF PEROVSKITE-TYPE TITANATES

被引：91

作者：

WASER, R

机构：

[1] Philips GmbH Forschungslaboratorien

来源：

FERROELECTRICS | 1992年 / 133卷 / 1-4期

关键词：

D O I：

10.1080/00150199208217984

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on the defect chemistry of acceptor-doped strontium titanate model materials, the role of interfaces in conduction and voltage-induced failure mechanisms is discussed. The impedance behaviour of conventional ceramics and ceramic thin films is compared.

引用

页码：109 / 114

页数：6

共 21 条

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