NEUTRON-INDUCED SINGLE EVENT UPSETS IN STATIC RAMS OBSERVED AT 10-KM FLIGHT ALTITUDE

被引：71

作者：

OLSEN, J ^{[1
]}

BECHER, PE ^{[1
]}

FYNBO, PB ^{[1
]}

RAABY, P ^{[1
]}

SCHULTZ, J ^{[1
]}

机构：

[1] DATAFLIGHT EUROPE AS,DK-3460 BIRKEROD,DENMARK

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 02期

关键词：

D O I：

10.1109/23.212319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Neutron induced single event upsets (SEUs) in static memory devices (SRAMs) have so far been seen only in laboratory environments. We report observations of 14 neutron induced SEUs at commercial aircraft flight altitudes as well. The observed SEU rate at 10 km flight altitude based on exposure of 160 standard 256 Kbit CMOS SRAMs is 4.8 . 10(-8) upsets/bit/day. In the laboratory 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, among these are two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs.

引用

页码：74 / 77

页数：4

共 7 条

[1] ALTITUDE VARIATION OF COSMIC-RAY NEUTRONS [J].