NONRADIATIVE RECOMBINATION VIA DEEP IMPURITY LEVELS IN SILICON - EXPERIMENT

被引：96

作者：

HANGLEITER, A

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.35.9149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9149 / 9161

页数：13

共 72 条

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