DEFECTS AND MICROVOIDS IN A-SI AND A-SI-H

被引：17

作者：

JUNG, AL

WANG, YH

LIU, G

XIONG, JJ

CAO, BS

YU, WZ

ADLER, D

机构：

[1] QUINGHUA UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 74卷 / 01期

关键词：

HYDROGENATED AMORPHOUS SILICON - POSITRON ANNIHILATION SPECTRA;

D O I：

10.1016/0022-3093(85)90396-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Edited Abstract)

引用

页码：19 / 24

页数：6

共 15 条

[1]

ADLER D, 1984, SEMICONDUCT SEMIMET, V21, P291

[2] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J].

ADLER, D .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :3-14

[3] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J].

ADLER, D .

SOLAR CELLS, 1983, 9 (1-2) :133-148

[4]

ADLER D, 1985, PHYSICAL PROPERTIES, P5

[5]

CAO B, 1982, NUCL TECHN, V6, P70

[6] INFRARED-ABSORPTION IN A-SI-H - 1ST OBSERVATION OF GASEOUS MOLECULAR H-2 AND SI-H OVERTONE [J].

CHABAL, YJ ;

PATEL, CKN .

PHYSICAL REVIEW LETTERS, 1984, 53 (02) :210-213

[7] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].

DANNEFAER, S ;

DEAN, GW ;

KERR, DP ;

HOGG, BG .

PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714

[8] A STUDY OF DEFECTS IN AMORPHOUS-SILICON FILMS [J].

DANNEFAER, S ;

KERR, D ;

HOGG, BG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :155-160

[9] SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON [J].

DANTONIO, P ;

KONNERT, JH .

PHYSICAL REVIEW LETTERS, 1979, 43 (16) :1161-1163

[10]

HAUTOJARVI P, 1979, POSITIONS SOLIDS

← 1 2 →