ION CURRENT-DENSITY AND ITS UNIFORMITY AT THE ELECTRON-CYCLOTRON RESONANCE POSITION IN ELECTRON-CYCLOTRON RESONANCE PLASMA

被引:28
作者
SAMUKAWA, S [1 ]
MORI, S [1 ]
SASAKI, M [1 ]
机构
[1] ANELVA CORP,DEPT DRY ETCHING ENGN,TOKYO 183,JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 01期
关键词
D O I
10.1116/1.577135
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Extremely high and uniform ion current density is achieved at the electron cyclotron resonance (ECR) position in a microwave cavity resonator with a 260 mm diam. Microwave power is most efficiently absorbed at the ECR position in the ECR plasma. The uniformity of the ion current density at the ECR position is 15 +/- 0.75 mA/cm2 in a 200 mm diam area. This high and uniform ion current density is accomplished with a large quartz window size with a 170 mm diam for microwave introduction and a flat profile of the 875 G equimagnetic field position. The ECR plasma etching system equipped with this microwave cavity resonator that is 260 mm in diameter has a high potential for uniform and high rate pattern fabrication in a ULSI circuit on a more than 6 in. diam substrate.
引用
收藏
页码:85 / 90
页数:6
相关论文
共 7 条
[1]  
GELLER R, 1970, APPL PHYS LETT, V16, P1993
[2]   REACTIVE ION-BEAM ETCHING USING A BROAD BEAM ECR ION-SOURCE [J].
MATSUO, S ;
ADACHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (01) :L4-L6
[3]   PRODUCTION OF LARGE AREA HIGH CURRENT ION-BEAMS [J].
OKAMOTO, Y ;
TAMAGAWA, H .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (08) :1193-&
[4]   EXTREMELY HIGH-SELECTIVE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON [J].
SAMUKAWA, S ;
SUZUKI, Y ;
SASAKI, M .
APPLIED PHYSICS LETTERS, 1990, 57 (04) :403-405
[5]   DEPENDENCE OF ECR PLASMA-ETCHING CHARACTERISTICS ON SUB MAGNETIC-FIELD AND SUBSTRATE POSITION [J].
SAMUKAWA, S ;
MORI, S ;
SASAKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (04) :792-797
[6]   MICROWAVE PLASMA ETCHING [J].
SUZUKI, K ;
OKUDAIRA, S ;
SAKUDO, N ;
KANOMATA, I .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :1979-1984
[7]   PLASMA ACCELERATION USING A HIGH FREQUENCY FIELD AND A STATIC MAGNETIC FIELD [J].
TOYAMA, H ;
OKABAYAS.M ;
ISHIZUKA, H .
PLASMA PHYSICS, 1968, 10 (04) :319-&