LOW-TEMPERATURE ELECTRICAL PROPERTIES OF ZN-DOPED ZNO

被引:17
作者
LI, PW [1 ]
HAGEMARK, KI [1 ]
机构
[1] 3M,CENT RES LABS,POB 33221,ST PAUL,MN 55133
关键词
D O I
10.1016/0022-4596(75)90344-8
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
引用
收藏
页码:371 / 375
页数:5
相关论文
共 12 条
[1]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P133
[3]  
HAGEMARK K, TO BE PUBLISHED
[4]   CONCENTRATION AND MOBILITY OF ELECTRONS IN INDIUM DOPED ZINC OXIDE CRYSTALS [J].
HAUSMANN, A ;
TEUERLE, W .
ZEITSCHRIFT FUR PHYSIK, 1972, 257 (04) :299-309
[5]   HALL-EFFECT OF PURE AND COPPER DOPED ZINC OXIDE CRYSTALS [J].
HAUSMANN, A ;
TEUERLE, W .
ZEITSCHRIFT FUR PHYSIK, 1973, 259 (02) :189-194
[6]   AN F-CENTER AS A PARAMAGNETIC DONOR IN ZINC OXIDE [J].
HAUSMANN, A .
ZEITSCHRIFT FUR PHYSIK, 1970, 237 (01) :86-&
[7]   THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES [J].
HUNG, CS .
PHYSICAL REVIEW, 1950, 79 (04) :727-728
[8]   LOW COST, VERSATILE HIGHLY STABLE CONSTANT CURRENT SUPPLY [J].
KROEGER, FR ;
RHINEHART, WA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (10) :1532-+
[9]  
MCFADDEN F, 1970, 3M RESEARCH REPORT
[10]   CONDUCTION ELECTRON SPIN RESONANCE IN GROUP II-VI SEMICONDUCTORS AND PHOSPHORS [J].
MULLER, KA ;
SCHNEIDER, J .
PHYSICS LETTERS, 1963, 4 (05) :288-291