QUASIBOUND EXCITON LO-PHONON INTERMEDIATE STATE IN MULTIPHONON RAMAN-SCATTERING OF SEMICONDUCTORS

被引：4

作者：

JAIN, KP ^{[1
]}

JAYANTHI, CS ^{[1
]}

机构：

[1] INT CTR THEORET PHYS,TRIESTE,ITALY

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.26.3273

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3273 / 3278

页数：6

共 26 条

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