RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES

被引:188
作者
GOBEL, EO
JUNG, H
KUHL, J
PLOOG, K
机构
关键词
D O I
10.1103/PhysRevLett.51.1588
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1588 / 1591
页数:4
相关论文
共 13 条
[1]  
Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[3]   SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].
ESAKI, L ;
TSU, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&
[4]  
FAULKNER RA, 1968, LOCALIZED EXCITATION
[5]   ELECTRON-HOLE PLASMA IN DIRECT GAP SEMICONDUCTORS - A NEW NON-EQUILIBRIUM MODEL [J].
FORCHEL, A ;
SCHWEIZER, H ;
NATHER, H ;
ROMANEK, KM ;
FISCHER, J ;
MAHLER, G .
PHYSICA B & C, 1983, 117 (MAR) :336-338
[6]   FREE CARRIER SCREENING OF THE FROHLICH INTERACTION IN GAAS [J].
GRAUDSZUS, W ;
GOBEL, EO .
PHYSICA B & C, 1983, 117 (MAR) :555-557
[7]   GIANT 2-PHOTON ABSORPTION DUE TO EXCITONIC MOLECULE [J].
HANAMURA, E .
SOLID STATE COMMUNICATIONS, 1973, 12 (09) :951-953
[8]  
Jung H., UNPUB
[9]   THEORY OF ELECTROABSORPTION BY ANISOTROPIC AND LAYERED SEMICONDUCTORS - 2-DIMENSIONAL EXCITONS IN A UNIFORM ELECTRIC-FIELD [J].
LEDERMAN, FL ;
DOW, JD .
PHYSICAL REVIEW B, 1976, 13 (04) :1633-1642
[10]   OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS [J].
MILLER, RC ;
KLEINMAN, DA ;
TSANG, WT ;
GOSSARD, AC .
PHYSICAL REVIEW B, 1981, 24 (02) :1134-1136