THE APPLICATION OF THE EXTENDED PAIR APPROXIMATION TO HOPPING CONDUCTION IN RF SPUTTERED AMORPHOUS-SILICON

被引：53

作者：

LONG, AR ^{[1
]}

MCMILLAN, J ^{[1
]}

BALKAN, N ^{[1
]}

SUMMERFIELD, S ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT ENGN,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1988年 / 58卷 / 02期

关键词：

D O I：

10.1080/13642818808208478

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：153 / 169

页数：17

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