CHEMICAL BATH DEPOSITION OF ZNSE AND CUSE THIN-FILMS USING N,N-DIMETHYLSELENOUREA

被引:72
作者
ESTRADA, CA [1 ]
NAIR, PK [1 ]
NAIR, MTS [1 ]
ZINGARO, RA [1 ]
MEYERS, EA [1 ]
机构
[1] UNIV NACL AUTONOMA MEXICO,IIM,ENERGIA SOLAR LAB,TEMIXCO 62580,MORELOS,MEXICO
关键词
D O I
10.1149/1.2054814
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Chemical bath deposition techniques for ZnSe and CuSe thin films using N,N-dimethylselenourea as the source of selenide ion are presented. Films of O.1 to 0.3 mum in thickness of ZnSe and CuSe are obtained in 2 to 10 h depositions at 50-degrees-C. The ZnSe films possess optical bandgap approximately 2.63 eV and suffer thermal degradation at temperatures >350-degrees-C. They are very resistive, with sheet resistance approximately 10(12) OMEGA/square (approximately 0.3 mum film, 10 h deposition). The CuSe films have sheet resistance approximately 10(3) OMEGA/SQUARE (approximately 0.13 mum, 3 h deposition) but undergo thermal degradation at temperatures >200-degrees-C. Structure, composition, optical, and electrical characteristics of the films are discussed.
引用
收藏
页码:802 / 806
页数:5
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