NA-PROMOTED OXIDATION OF SI - THE SPECIFIC OXIDATION MECHANISM

被引：26

作者：

FARACI, G ^{[1
]}

LAROSA, S ^{[1
]}

PENNISI, AR ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] ECOLE POLYTECH FED,INST PHYS APPL,PH ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.49.2943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dramatic enhancement of the silicon room-temperature oxidation rate by a Na overlayer has been attributed to the spectator catalytic action of the alkali metal. In contrast, we show evidence that Na participates in the oxidation process binding an oxygen atom in a substoichiometric intermediate oxidation state. This causes preferential saturation of the semiconductor dangling bonds on the surface and a subsequent promotion of the oxide growth. We have, in fact, detected the Na 2p photoemission chemical shifts when bonds with an oxygen atom are established in a hybrid configuration.

引用

页码：2943 / 2946

页数：4

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