ATOMIC LAYER EPITAXY IN THE GROWTH OF COMPLEX THIN-FILM STRUCTURES FOR ELECTROLUMINESCENT APPLICATIONS

被引：12

作者：

NIINSTO, L

LESKELA, M

机构：

[1] Laboratory of Inorganic Chemistry, Helsinki University of Technology

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷

关键词：

D O I：

10.1016/0169-4332(94)90258-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin film electroluminescent (TFEL) devices are formed by a stack of thin films and are complicated to process. The multicolor devices which are close to commercialization are much more complex than the monochrome ones. The problems in the preparation and improving of TFEL devices are reviewed and the possibilities of the atomic layer epitaxy technique in solving these problems are discussed. Special emphasis is placed on the precursor properties.

引用

页码：454 / 459

页数：6

共 39 条

[1] PRECURSOR PROPERTIES OF CALCIUM BETA-DIKETONATE IN VAPOR-PHASE ATOMIC LAYER EPITAXY [J].