SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：234

作者：

HOFSTEIN, SR

HEIMAN, FP

机构：

来源：

关键词：

D O I：

10.1109/PROC.1963.2488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1190 / &

共 10 条

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