IDENTIFICATION OF THE TELLURIUM DONOR AT THE RESIDUAL LEVEL IN GAAS

被引：4

作者：

COLTER, PC ^{[1
]}

REYNOLDS, DC ^{[1
]}

LITTON, CW ^{[1
]}

SMITH, EB ^{[1
]}

机构：

[1] USAF,WRIGHT AERONAUT LABS,AADR,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 45卷 / 04期

关键词：

D O I：

10.1016/0038-1098(83)90899-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：375 / 377

页数：3

共 8 条

[1]

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SOLID STATE COMMUNICATIONS, 1981, 38 (11) :1053-1056

[3] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J].

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STRADLING, RA .

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[4] BEHAVIOUR OF SELENIUM AND TELLURIUM DOPANTS IN SOLUTION GROWTH OF GALLIUM ARSENIDE [J].

GREENE, PD .

SOLID STATE COMMUNICATIONS, 1971, 9 (15) :1299-&

[5]

KANG CS, 1968, 2ND P INT S GAAS, P18

[6] SPECTROSCOPY OF DONORS IN HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LOW, TS ;

STILLMAN, GE ;

CHO, AY ;

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CALAWA, AR .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :611-613

[7] RESIDUAL DONORS IN HIGH-PURITY GALLIUM-ARSENIDE EPITAXIALLY GROWN FROM VAPOR-PHASE [J].

OZEKI, M ;

KITAHARA, K ;

NAKAI, K ;

SHIBATOMI, A ;

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RYUZAN, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) :1617-1622

[8]

WOLFE CM, 1977, I PHYS C SER B, V33, P120

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