EFFECT OF IMPURITY CONDUCTION ON ELECTRON RECOMBINATION IN GERMANIUM AND SILICON AT LOW TEMPERATURES

被引:16
作者
BROWN, RA
机构
来源
PHYSICAL REVIEW | 1966年 / 148卷 / 02期
关键词
D O I
10.1103/PhysRev.148.974
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:974 / &
相关论文
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