EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS

被引：103

作者：

KREBS, JJ ^{[1
]}

STAUSS, GH ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.15.17

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：17 / 22

页数：6

共 17 条

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[9]

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[10] PHOTOLUMINESCENCE FROM DEEP CENTERS IN GAAS [J].

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SOLID STATE COMMUNICATIONS, 1976, 19 (06) :521-524

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