FABRICATION OF DOMAIN REVERSED GRATINGS FOR SHG IN LINBO3 BY ELECTRON-BEAM BOMBARDMENT

被引：32

作者：

KEYS, RW ^{[1
]}

LONI, A ^{[1
]}

DELARUE, RM ^{[1
]}

IRONSIDE, CN ^{[1
]}

MARSH, JH ^{[1
]}

LUFF, BJ ^{[1
]}

TOWNSEND, PD ^{[1
]}

机构：

[1] UNIV SUSSEX,SCH MATH & PHYS SCI,BRIGHTON BN1 9QH,E SUSSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Crystals; Electron beam lithograp; Lasers and laser applications;

D O I：

10.1049/el:19900127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technique for the lithographic definition and fabrication of domain reversed regions in LiNbO3is report ed, with application to periodic structures for SHG. For first time, to our knowledge, domain reversal has beenn achieved on the negative c-face of the crystal. Such a struc ture should be useful for quasiphasematched second harmo nic generation of infrared laser radiation. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：188 / 190

页数：3

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