SHIFT OF THE DX LEVEL IN NARROW SI DELTA-DOPED GAAS

被引：11

作者：

KOENRAAD, PM

DELANGE, W

BLOM, FAP

LEYS, MR

PERENBOOM, JAAJ

SINGLETON, J

WOLTER, JH

机构：

[1] Dept. of Phys., Eindhoven Univ. of Technol.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 10B期

关键词：

D O I：

10.1088/0268-1242/6/10B/027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present measurements under hydrostatic pressure on Si delta-doped GaAs. From the measurements we conclude that the energy position of the DX level is shifted away from the GAMMA conduction band minimum at high doping concentrations. This shift is consistent with measurements carried out on bulk GaAs heavily doped with silicon.

引用

页码：B143 / B145

页数：3

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