LOW-ENERGY ELASTIC-SCATTERING OF ELECTRONS BY BOUND SILICON AND GERMANIUM ATOMS

被引：11

作者：

MEREDITH, RJ ^{[1
]}

WILLIAMSON, W ^{[1
]}

MONTEMAYOR, VJ ^{[1
]}

OZTURK, N ^{[1
]}

ANTOLAK, AJ ^{[1
]}

机构：

[1] SANDIA NATL LABS,DIV THEORET,LIVERMORE,CA 94550

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 10期

关键词：

D O I：

10.1063/1.347078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Elastic differential and total cross sections were computed for 10 eV to 1 keV electrons scattered from bound silicon and germanium atoms using the method of partial waves. The effects of including combinations of static, polarization, and exchange potentials in the optical potential for partial wave analysis were investigated. A parameterization of our total cross section results is also provided in terms of the screened Rutherford cross section.

引用

页码：4937 / 4941

页数：5

共 18 条

[1]

[Anonymous], 2007, INTRO SOLID STATE PH

[2] EQUIVALENT EXCHANGE POTENTIALS IN ELECTRON-SCATTERING [J].