ELECTRICAL TRANSPORT-PROPERTIES OF V3SI, V5SI3, AND VSI2 THIN-FILMS

被引：34

作者：

NAVA, F ^{[1
]}

BISI, O ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.34.6143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6143 / 6150

页数：8

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