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THE RECURSION METHOD AND THE ELECTRONIC CHARGE-DENSITY IN DIAMOND AND SILICON

被引：8
作者：
JONES, R
KING, T
机构：
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 47卷 / 05期
关键词：
D O I：
10.1080/13642812.1983.11643258
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：491 / 493
页数：3
相关论文
共 4 条
[1]   THE RECURSION METHOD AND A 1ST-PRINCIPLES TIGHT-BINDING CALCULATION OF THE BAND STRUCTURES OF DIAMOND AND SILICON [J].
JONES, R ;
KING, T .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05) :481-490
[2]   1ST-PRINCIPLES ELECTRONIC-STRUCTURE OF SI, GE, GAP, GAAS, ZNS, AND ZNSE .1. SELF-CONSISTENT ENERGY-BANDS, CHARGE-DENSITIES, AND EFFECTIVE MASSES [J].
WANG, CS ;
KLEIN, BM .
PHYSICAL REVIEW B, 1981, 24 (06) :3393-3416
[3]  
WILKINSON JH, 1965, ALGEBRAIC EIGENVALUE, P300
[4]   GROUND-STATE PROPERTIES OF DIAMOND [J].
YIN, MT ;
COHEN, ML .
PHYSICAL REVIEW B, 1981, 24 (10) :6121-6124
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