INVESTIGATION OF DEEP CENTERS IN GALLIUM-DOPED ZINC-SULFIDE CRYSTALS

被引：4

作者：

GEORGOBIANI, AN

OZEROV, YV

STRUMBAN, EE

ANISIMOV, VV

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW,USSR

[2] MOSCOW ENGN PHYS INST,MOSCOW,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 35卷 / 01期

关键词：

D O I：

10.1002/pssa.2210350127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：251 / 257

页数：7

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[6]

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[9] EXTRINSIC ELECTROABSORPTION IN HIGH-RESISTIVITY GAAS [J].

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[10] INFRARED ABSORPTION DUE TO DONOR STATES IN ZNS CRYSTALS [J].

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SHIONOYA, S ;

KODA, T ;

HIOKI, R .

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